Applied and Computational Engineering
- The Open Access Proceedings Series for Conferences
Proceedings of the 2023 International Conference on Functional Materials and Civil Engineering
Series Vol. 26 , 07 November 2023
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Access | Article
Research on the status of GaN single crystal growth
* Author to whom correspondence should be addressed.
Abstract
GaN is a third-generation semiconductor. As an ideal material of the new generation semiconductor today, it has many features such as high saturated electron mobility and wide band. The methods of GaN growth developed rapidly recently. We reviewed recent artiles and then we collect the various of methods about the GaN single crystal growth, after that we compare the difference among these method. This paper mainly talks about three methods of growing GaN single crystal: The Ammonothermal method, the Sodium-flux growth method, and the Halide vapor phase epitaxy (HVPE), and we collect both of the advantages and disadvantages. By putting all characteristics of each methods together we found that combining the HVPE method and Ammonothermal method together can connect the advantages together and avoid some of these disadvantages. We can use the HVPE method to grow the GaN seed and expand the crystal using the Ammonothermal method may be a good choice to grow the GaN single crystal at a low cost. Because if we start with Ammonothermal method, it is easy to form the polycrystalline and if we use the HVPE method to grow large crytal, it is too expensive to do so. Therefore, combining two methods can avoid the disadantages in each other and save the cost when growing.
Keywords
gallium nitride crystal growth, ammoniathermal method, hydride vapor phase epitaxy, HVPE, sodium-flux method
References
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Data Availability
The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.
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- Volume Title
- Proceedings of the 2023 International Conference on Functional Materials and Civil Engineering
- ISBN (Print)
- 978-1-83558-073-8
- ISBN (Online)
- 978-1-83558-074-5
- Published Date
- 07 November 2023
- Series
- Applied and Computational Engineering
- ISSN (Print)
- 2755-2721
- ISSN (Online)
- 2755-273X
- DOI
- 10.54254/2755-2721/26/20230786
- Copyright
- © 2023 The Author(s)
- Open Access
- This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited