Series Vol. 26 , 07 November 2023
* Author to whom correspondence should be addressed.
GaN is a third-generation semiconductor. As an ideal material of the new generation semiconductor today, it has many features such as high saturated electron mobility and wide band. The methods of GaN growth developed rapidly recently. We reviewed recent artiles and then we collect the various of methods about the GaN single crystal growth, after that we compare the difference among these method. This paper mainly talks about three methods of growing GaN single crystal: The Ammonothermal method, the Sodium-flux growth method, and the Halide vapor phase epitaxy (HVPE), and we collect both of the advantages and disadvantages. By putting all characteristics of each methods together we found that combining the HVPE method and Ammonothermal method together can connect the advantages together and avoid some of these disadvantages. We can use the HVPE method to grow the GaN seed and expand the crystal using the Ammonothermal method may be a good choice to grow the GaN single crystal at a low cost. Because if we start with Ammonothermal method, it is easy to form the polycrystalline and if we use the HVPE method to grow large crytal, it is too expensive to do so. Therefore, combining two methods can avoid the disadantages in each other and save the cost when growing.
gallium nitride crystal growth, ammoniathermal method, hydride vapor phase epitaxy, HVPE, sodium-flux method
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The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.