Applied and Computational Engineering

- The Open Access Proceedings Series for Conferences


Proceedings of the 4th International Conference on Signal Processing and Machine Learning

Series Vol. 52 , 27 March 2024


Open Access | Article

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Yexu Zhang * 1
1 Nexus international school

* Author to whom correspondence should be addressed.

Applied and Computational Engineering, Vol. 52, 76-80
Published 27 March 2024. © 27 March 2024 The Author(s). Published by EWA Publishing
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Citation Yexu Zhang. An investigation into the short-circuit characteristics of Sic MOSFET power devices. ACE (2024) Vol. 52: 76-80. DOI: 10.54254/2755-2721/52/20241263.

Abstract

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Keywords

Silicon carbide (SiC) MOSFET, high temperature, short-circuit effect, reliability

References

1. Nawaz, M., & Ilves, K. (2016). Replacing Si to SiC: Opportunities and challenges. In 2016 46th European Solid-State Device Research Conference (ESSDERC) (pp. 472-475). Lausanne.

2. Alves, L. F. S., et al. (2017). SiC power devices in power electronics: An overview. In 2017 Brazilian Power Electronics Conference (COBEP) (pp. 1-8). Juiz de Fora.

3. Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014). A Survey of Wide Bandgap Power Semiconductor Devices. IEEE Transactions on Power Electronics, 29(5), 2155-2163.

4. Wang, G., Huang, X., Wang, J., Zhao, T., Bhattacharya, S., & Huang, A. Q. (2010). Comparisons of 6.5kV 25A Si IGBT and 10-kV SiC MOSFET in Solid-State Transformer application. In 2010 IEEE Energy Conversion Congress and Exposition (pp. 100-104). Atlanta, GA.

5. Powerex. (2018, February 02). Full SiC & Hybrid SiC IGBTs & IPMs. Retrieved from http://www.pwrx.com/Promotion/FullSicHybridDesign

6. Cheng, L., & Palmour, J. W. (2014). Cree’s SiC power MOSFET technology: Present status and future perspective. Presented at the Ninth Annual SiC MOS Workshop.

7. Nakamura, R., Nakano, Y., Aketa, M., Noriaki, K., & Ino, K. (2014). 1200V 4H-SiC Trench Devices. In PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1-7). Nuremberg, Germany.

8. Lichtenwalner, D., Cheng, L., Allen, S., Palmour, J. W., & Scozzie, C. (2014). Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC. Mater. Res. Soc. Symp. Proc, Vol. 1693.

9. Peters, D., Basler, T., Zippelius, B., et al. (2017). The New CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance. In PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 1-7). Nuremberg, Germany.

10. González, J. A. O., & Alatise, O. (2019). A Novel Non-Intrusive Technique for BTI Characterization in SiC MOSFETs. IEEE Transactions on Power Electronics, 34(6), 5737-5747.

11. Pappis, Douglas, Lucas de Menezes, and Peter Zacharias. "Comparison of the short circuit capability of planar and trench SiC MOSFETs." PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. VDE, 2017.

Data Availability

The datasets used and/or analyzed during the current study will be available from the authors upon reasonable request.

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Volume Title
Proceedings of the 4th International Conference on Signal Processing and Machine Learning
ISBN (Print)
978-1-83558-349-4
ISBN (Online)
978-1-83558-350-0
Published Date
27 March 2024
Series
Applied and Computational Engineering
ISSN (Print)
2755-2721
ISSN (Online)
2755-273X
DOI
10.54254/2755-2721/52/20241263
Copyright
27 March 2024
Open Access
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

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